Module VI: Introduction to Transistors

This module covers theory only - numerical problems are not expected.

1. Bipolar Junction Transistor (BJT)

1.1 Structure of BJT

What is a BJT?

A Bipolar Junction Transistor (BJT) is a three-terminal semiconductor device that uses both electrons and holes as charge carriers (hence "bipolar"). It consists of three alternately doped semiconductor regions forming two P-N junctions.

Types of BJT

There are two types of BJT based on the arrangement of doped regions:

NPN Transistor

  • Two N-type regions sandwiching a thin P-type region
  • Majority carriers are electrons
  • More commonly used (electrons have higher mobility)
  • Arrow on emitter points outward (Not Pointing iN)

PNP Transistor

  • Two P-type regions sandwiching a thin N-type region
  • Majority carriers are holes
  • Less common in modern circuits
  • Arrow on emitter points inward (Pointing iN)

BJT Structure and Symbols

NPN Transistor N Emitter P Base N Collector E-B Junction C-B Junction NPN Symbol C E B PNP Transistor P Emitter N Base P Collector PNP Symbol C E B Three Terminals of BJT Emitter (E): Heavily doped. Emits majority carriers into base. Base (B): Lightly doped, very thin. Controls carrier flow. Collector (C): Moderately doped. Collects carriers from base.

1.2 Operation of BJT

Operating Principle (NPN Transistor)

For proper operation of an NPN transistor:

Current Flow Mechanism:

  1. When E-B junction is forward biased, electrons from emitter are injected into the thin base region
  2. The base is very thin and lightly doped, so most electrons (95-99%) diffuse through without recombining
  3. These electrons are attracted by the reverse-biased collector and swept into collector region
  4. A small base current (IB) controls a much larger collector current (IC)

BJT Current Relationships

IE = IC + IB
IC = β × IB = hFE × IB
IC = α × IE

Where:

Key Operating Points

1.3 BJT Configurations

A BJT can be connected in three configurations based on which terminal is common to both input and output circuits:

  1. Common Base (CB)
  2. Common Emitter (CE) - Most widely used
  3. Common Collector (CC)

Common Emitter (CE) Configuration

This is the most commonly used configuration because it provides both voltage gain and current gain.

Circuit Arrangement:

Common Emitter Configuration

Input + Vin B C E +VCC RL Output Vout Emitter is COMMON to Input and Output

Characteristics of CE Configuration

Parameter Value/Characteristic
Current Gain (β) High (50-300)
Voltage Gain High (can be > 100)
Power Gain Very High (highest of all configurations)
Input Impedance Medium (1-5 kΩ)
Output Impedance Medium-High (10-50 kΩ)
Phase Shift 180° (output inverted)

2. Field Effect Transistor (FET)

2.1 Structure and Operation

What is an FET?

A Field Effect Transistor (FET) is a voltage-controlled semiconductor device that uses an electric field to control current flow. Unlike BJT which uses both electrons and holes, FET uses only one type of charge carrier (unipolar device).

Types of FET

JFET (Junction FET)

  • Uses P-N junction for channel control
  • N-channel and P-channel types
  • Depletion mode operation only
  • Gate must be reverse biased

MOSFET (Metal Oxide Semiconductor FET)

  • Uses insulated gate (SiO₂ layer)
  • Enhancement and depletion modes
  • Higher input impedance than JFET
  • Most commonly used in digital circuits

N-Channel JFET Structure and Symbol

N-Channel JFET Structure N-Channel P P Drain (D) Source (S) G Depletion Regions N-Channel JFET Symbol D S G Operating Principle: Negative Gate voltage → Depletion region widens → Channel narrows → Less current flows

FET Terminals

Terminal Function
Gate (G) Control terminal. Voltage applied here controls current through channel. Very high input impedance.
Drain (D) Terminal where current exits the channel. Connected to positive supply for N-channel.
Source (S) Terminal where current enters the channel. Usually connected to ground for N-channel.

FET Operation

For an N-channel JFET:

BJT vs FET Comparison

Parameter BJT FET
Type Bipolar (uses electrons and holes) Unipolar (uses one carrier type)
Control Current-controlled Voltage-controlled
Input Impedance Low to Medium (1-5 kΩ) Very High (10¹⁰ - 10¹⁴ Ω)
Noise Higher Lower
Temperature Stability Less stable More stable
Switching Speed Moderate Fast (especially MOSFETs)

3. Applications of BJT and FET

3.1 Amplification

Transistor as an Amplifier

Both BJT and FET can amplify weak signals. The transistor is biased in the active region (BJT) or saturation region (FET).

How Amplification Works:

Amplifier Action

Small Input Transistor Amplifier (CE or CS) Gain = A Large Output

Amplifier Applications

3.2 Switching

Transistor as a Switch

Transistors can act as electronic switches that are faster, more reliable, and have no moving parts compared to mechanical switches.

Two States of Operation:

Cut-off State (OFF)

  • BJT: No base current → No collector current
  • FET: Gate voltage below threshold → No drain current
  • Transistor acts as open switch
  • Very high resistance between output terminals

Saturation State (ON)

  • BJT: Maximum base current → Maximum collector current
  • FET: Gate voltage above threshold → Maximum drain current
  • Transistor acts as closed switch
  • Very low resistance between output terminals

Transistor Switching Action

OFF (Cut-off) Load No Current (High R) ON (Saturation) Load Current Flows (Low R)

Switching Applications

3.3 Oscillators

Transistor in Oscillators

An oscillator is a circuit that generates a continuous AC signal from DC power without any external input signal.

Basic Principle:

Amplifier
(Transistor)
Output
(AC Signal)
Feedback Network
(LC or RC)
Positive Feedback
(In-phase)

Types of Oscillators

Type Frequency Range Application
RC Oscillators
(Phase Shift, Wien Bridge)
Audio frequencies
(20 Hz - 20 kHz)
Audio signal generators, test equipment
LC Oscillators
(Colpitts, Hartley)
RF frequencies
(100 kHz - 100 MHz)
Radio transmitters, receivers
Crystal Oscillators Very stable frequencies
(MHz range)
Clocks, computers, watches

Oscillator Applications

Summary: Transistors

Topic Key Points
BJT Three terminals (B, C, E); Current-controlled; NPN/PNP types; IC = β × IB
CE Configuration Most common; High current, voltage, and power gain; 180° phase shift
FET Three terminals (G, D, S); Voltage-controlled; Very high input impedance; JFET/MOSFET types
Amplification Small input signal produces large output; Active/saturation region; Audio, RF applications
Switching ON (saturation) / OFF (cut-off) states; Digital logic; Power control; High-speed operation
Oscillators Amplifier + Positive feedback; Generate AC from DC; RC, LC, Crystal types