This module covers theory only - numerical problems are not expected.
1. Bipolar Junction Transistor (BJT)
1.1 Structure of BJT
What is a BJT?
A Bipolar Junction Transistor (BJT) is a three-terminal semiconductor device that uses both electrons and holes as charge carriers (hence "bipolar"). It consists of three alternately doped semiconductor regions forming two P-N junctions.
Types of BJT
There are two types of BJT based on the arrangement of doped regions:
NPN Transistor
Two N-type regions sandwiching a thin P-type region
Majority carriers are electrons
More commonly used (electrons have higher mobility)
Arrow on emitter points outward (Not Pointing iN)
PNP Transistor
Two P-type regions sandwiching a thin N-type region
Majority carriers are holes
Less common in modern circuits
Arrow on emitter points inward (Pointing iN)
BJT Structure and Symbols
1.2 Operation of BJT
Operating Principle (NPN Transistor)
For proper operation of an NPN transistor:
Emitter-Base Junction: Forward biased (allows current flow)
When E-B junction is forward biased, electrons from emitter are injected into the thin base region
The base is very thin and lightly doped, so most electrons (95-99%) diffuse through without recombining
These electrons are attracted by the reverse-biased collector and swept into collector region
A small base current (IB) controls a much larger collector current (IC)
BJT Current Relationships
IE = IC + IB
IC = β × IB = hFE × IB
IC = α × IE
Where:
β (beta) or hFE = Current gain (typically 50-300)
α (alpha) = IC/IE (typically 0.95-0.99)
α = β/(β+1) and β = α/(1-α)
Key Operating Points
A small change in base current produces a large change in collector current
This current amplification property is the basis of transistor amplifiers
Collector current is almost independent of collector voltage (within limits)
The transistor can be used as a current-controlled current source
1.3 BJT Configurations
A BJT can be connected in three configurations based on which terminal is common to both input and output circuits:
Common Base (CB)
Common Emitter (CE) - Most widely used
Common Collector (CC)
Common Emitter (CE) Configuration
This is the most commonly used configuration because it provides both voltage gain and current gain.
Circuit Arrangement:
Emitter is common to both input and output circuits
Input signal is applied between Base and Emitter
Output is taken between Collector and Emitter
Common Emitter Configuration
Characteristics of CE Configuration
Parameter
Value/Characteristic
Current Gain (β)
High (50-300)
Voltage Gain
High (can be > 100)
Power Gain
Very High (highest of all configurations)
Input Impedance
Medium (1-5 kΩ)
Output Impedance
Medium-High (10-50 kΩ)
Phase Shift
180° (output inverted)
2. Field Effect Transistor (FET)
2.1 Structure and Operation
What is an FET?
A Field Effect Transistor (FET) is a voltage-controlled semiconductor device that uses an electric field to control current flow. Unlike BJT which uses both electrons and holes, FET uses only one type of charge carrier (unipolar device).
Types of FET
JFET (Junction FET)
Uses P-N junction for channel control
N-channel and P-channel types
Depletion mode operation only
Gate must be reverse biased
MOSFET (Metal Oxide Semiconductor FET)
Uses insulated gate (SiO₂ layer)
Enhancement and depletion modes
Higher input impedance than JFET
Most commonly used in digital circuits
N-Channel JFET Structure and Symbol
FET Terminals
Terminal
Function
Gate (G)
Control terminal. Voltage applied here controls current through channel. Very high input impedance.
Drain (D)
Terminal where current exits the channel. Connected to positive supply for N-channel.
Source (S)
Terminal where current enters the channel. Usually connected to ground for N-channel.
FET Operation
For an N-channel JFET:
Current flows from Drain to Source through the N-channel
Gate-Source voltage (VGS) controls the channel width
More negative VGS → Wider depletion region → Narrower channel → Less current
At pinch-off voltage (VP), the channel is completely depleted and current stops
FET is voltage-controlled, unlike BJT which is current-controlled
BJT vs FET Comparison
Parameter
BJT
FET
Type
Bipolar (uses electrons and holes)
Unipolar (uses one carrier type)
Control
Current-controlled
Voltage-controlled
Input Impedance
Low to Medium (1-5 kΩ)
Very High (10¹⁰ - 10¹⁴ Ω)
Noise
Higher
Lower
Temperature Stability
Less stable
More stable
Switching Speed
Moderate
Fast (especially MOSFETs)
3. Applications of BJT and FET
3.1 Amplification
Transistor as an Amplifier
Both BJT and FET can amplify weak signals. The transistor is biased in the active region (BJT) or saturation region (FET).
How Amplification Works:
A small input signal modulates the base/gate current/voltage
This causes a larger change in collector/drain current
The larger current through the load resistor produces an amplified voltage
Voltage gain = Output voltage change / Input voltage change
Amplifier Action
Amplifier Applications
Audio Amplifiers: Amplify sound signals in speakers, headphones, microphones
RF Amplifiers: Boost radio frequency signals in communication systems
Operational Amplifiers: Building blocks of analog circuits
Instrumentation Amplifiers: Amplify sensor signals in measurement systems
Power Amplifiers: Drive speakers, motors, and other loads
3.2 Switching
Transistor as a Switch
Transistors can act as electronic switches that are faster, more reliable, and have no moving parts compared to mechanical switches.
Two States of Operation:
Cut-off State (OFF)
BJT: No base current → No collector current
FET: Gate voltage below threshold → No drain current
Transistor acts as open switch
Very high resistance between output terminals
Saturation State (ON)
BJT: Maximum base current → Maximum collector current
FET: Gate voltage above threshold → Maximum drain current
Transistor acts as closed switch
Very low resistance between output terminals
Transistor Switching Action
Switching Applications
Digital Logic Gates: AND, OR, NOT, NAND, NOR gates in computers
Microprocessors: Billions of transistor switches in CPUs
Memory Circuits: RAM, Flash memory storage
Motor Control: H-bridge circuits for motor direction control
Power Electronics: Switching power supplies, inverters